Volterra black-box model of electron devices nonlinear behavior based on Neural Network parameters

نویسندگان

  • GEORGINA STEGMAYER
  • MARCO PIROLA
  • GIOVANNI GHIONE
  • GIANCARLO ORENGO
  • PAOLO COLANTONIO
چکیده

With this paper we want to present a black-box model, that can be applied to a vast number of RF electron devices (e.g. FET). We will show that an analytical Volterra series approximation of the nonlinear behavior time-dependent model of an electron device can be built using a neural network and its parameters, once the proper training data are given. Key-Words: black-box model, nonlinearity, Volterra model, Volterra Kernels, neural network parameters.

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تاریخ انتشار 2004